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Full text of "USPTO Patents Application 10078831"

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MIO0018V2 

Serial No. 10/078,831 



-2 



AMENDMENTS TO THE CLAIMS 

1 . (Currently amended) A semiconductor device precursor comprising: 

a substrate; 

a layer of dielectric material formed on at least a portion of said substrate; 
a layer of conductive material formed within said layer of dielectric material; and 
a layer of hard mask material formed on at least a portion of said layer of 
dielectric material; at least a portion of said layer of dielectric material and said layer of 
hard mask material each having openings therein defining a via, said via exposing at 
least a portion of said layer of conductive material; said layer of dielectric material 
including a pair of shoulders having said hard mask material thereon, and said layer of 
hard mask material having a pair of facets. 

2. (Original) A semiconductor device precursor as claimed in claim 1 in which said 
layer of hard mask material includes a layer of etch resistant material thereon. 

3. (Original) A semiconductor device precursor as claimed in claim 1 wherein said hard 
mask material is selected from the group consisting of tungsten, tungsten silicide, 
polycrystalline silicon, titanium, titanium nitride, titanium silicide, and titanium-tungsten 
alloys. 

4. (Previously presented) A semiconductor precursor device as claimed in claim 1 , 
wherein said layer of conductive material contacts at least a portion of said substrate. 



MIO0018V2 -3- 
Serial No. 10/078,831 

5. (Currently amended) A semiconductor device precursor comprising: 

a substrate; 

a layer of dielectric material formed on at least a portion of said substrate; 

a layer of conductive material formed within said layer of dielectric material; 

a layer of hard mask material formed on at least a portion of said layer of 
dielectric material; at least a portion of said layer of dielectric material and said layer of 
hard mask material each having openings therein defining a via, said via exposing at 
least a portion of said layer of conductive material; said layer of dielectric material 
including a pair of shoulders having said hard mask material thereon, and said layer of 
hard mask material having a pair of facets; and 

an interconnect material in said via. 

6. (Original) A semiconductor device as claimed in claim 5, wherein said hard mask 
material is selected from the group consisting of tungsten, tungsten silicide, 
polycrystalline silicon, titanium, titanium nitride, titanium silicide, and titanium-tungsten 
alloys. 

7. (Original) A semiconductor device as claimed in claim 5, wherein said hard mask 
material comprises a titanium-tungsten alloy. 

8. (Previously presented) A semiconductor precursor device as claimed in claim 5, 
wherein said layer of conductive material contacts at least a portion of said substrate. 



MIO0018V2 -4- 
Serial No. 10/078,831 

9. (New) A semiconductor device precursor comprising: 
a substrate; 

a layer of dielectric material formed on at least a portion of said substrate; 
a layer of conductive material formed within said layer of dielectric material; and 
a layer of hard mask material formed by a single deposition of hard mask 
material on at least a portion of said layer of dielectric material; at least a portion of said 
layer of dielectric material and said layer of hard mask material each having openings 
therein defining a via, said via exposing at least a portion of said layer of conductive 
material; said layer of dielectric material including a pair of shoulders having said hard 
mask material thereon, and said layer of hard mask material having a pair of facets.